https://www.geeknetic.es/Noticia/37568/SK-Hynix-y-Samsung-compiten-por-liderar-la-memoria-LPDDR6-velocidades-de-hasta-14-4-Gbps-y-mejoras-contra-ataques-Row-Hammer.html

South Korea’s two main memory manufacturers are preparing to launch their next-generation LPDDR6 modules. SK Hynix and Samsung will present their respective solutions at the International Solid-State Circuits Conference (ISSCC) 2026, which will be held between February 15 and 19 in San Francisco. The event is the main showcase to show the Major advances in silicon designand both companies arrive with their homework done.

SK hynix will market 16 Gb modules capable of reaching transfers of 14.4 Gbps per pin, manufactured with its 1c generation process (also known as 1γ), which corresponds to the sixth iteration of its 10 nm DRAM technology. This speed matches the maximum limits set by JEDEC for LPDDR6, suggesting that the company could be preparing overclocked LPDDR6X versions in the near future.

Samsung improves its figures since CES

Samsung has updated the specifications of its LPDDR6 memory compared to what was shown at CES 2026 a few weeks ago. The modules it will present now operate at 12.8 Gbps, a speed noticeably faster than the 10.7 Gbps of the initial announcement. The company manufactures this memory on a 12nm process, slightly larger than SK hynix’s 10nm node, but claims to achieve a 21% improvement in energy efficiency compared to the previous generation LPDDR5X.

Both manufacturers incorporate the standard features of LPDDR6. The most significant is the integrated row activation count tracking, an absolute first for any DRAM standard. This mechanism directly combats Row Hammer attacks by having both the controller and the memory chip monitor activations, rather than relying solely on refresh-based mitigation like previous generations did.

The new standard also introduces metadata embedded directly into the data packets instead of using dedicated pins, allowing for comprehensive error correction on both the chip and the link. Additionally, LPDDR6 supports dynamic voltage and frequency scaling on three voltage rails versus LPDDR5’s two, along with efficiency modes that can double device density while reducing input and output power consumption.